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| 2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications DC-DC Converter Applications High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) 0.95 0.95 2.90.2 1.90.2 Unit: mm +0.2 2.8-0.3 +0.2 1.6-0.1 Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) High-speed switching: tf = 0.2 s (typ) 1 2 3 Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current (Note 1) Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range t = 10s DC DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg Rating 180 150 120 7 1.0 2.0 0.1 1000 625 150 -55 to 150 Unit V V V V A A A mW mW C C 0.70.05 1. Base 2. Emitter 3. Collector JEDEC JEITA TOSHIBA 00.1 2-3S1A Weight: 0.01g (Typ.) Note 1: Ensure that the channel temperature does not exceed 150C. 2 Note 2: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm ) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 0.160.05 0.15 Absolute Maximum Ratings (Ta = 25C) 0.40.1 2SC6061 Electrical Characteristics (Ta = 25C) Characteristic Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) DC current gain hFE (2) hFE (3) Collector emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time VCE (sat) VBE (sat) tr tstg tf Test Conditions VCB = 180 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1 mA VCE = 2 V, IC = 0.1 A VCE = 2 V, IC = 0.3 A IC = 0.3 A, IB = 0.01 A IC = 0.3 A, IB = 0.01 A See Figure 3 circuit diagram VCC72 V, RL = 24 IB1 = -IB2 = 10 mA Min 180 120 100 120 60 Typ. 0.1 1.5 0.2 Max 100 100 300 0.14 1.1 s V V Unit nA nA V V Figure 3 Switching Time Test Circuit & Timing Chart VCC 20 s IB1 IB2 IB2 Duty cycle < 1% IB1 RL Output Input Marking Part No. (or abbreviation code) WN Lot code (year) Dot: even year No dot: odd year Lot code (month) 2 2006-11-13 2SC6061 IC - VCE 1 12 10 8 1 IC - VBE Common emitter Ta = 25 Single non-repetitive pulse (A) Collector current IC 0.6 Collector current IC 4 3 (A) 0.8 6 0.8 0.6 0.4 2 0.4 Ta = 100 C 0.2 25 -55 0.2 IB=1mA 0 Common emitter Ta = 25 Single non-repetitive pulse 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1 1.2 COLLECTOR-EMITTER VOLTAGE VCE (V) Base-emitter voltage VBE (V) hFE - IC 1000 1 VCE (sat) - IC Collector -emitter saturation voltage VCE (sat) (V) Common emitter = 30 Single non-repetitive pulse Ta = 100 C DC current gain hFE 100 25 -55 0.1 25 Ta = 100 C -55 10 1 0.001 Common emitter VCE = 2 V Single non-repetitive pulse 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 Collector current IC (A) Collector current IC (A) VBE (sat) - IC 10 Base -emitter saturation voltage VBE (sat) (V) Common emitter = 30 Single non-repetitive pulse 1 Ta = 55 C 25 100 0.1 0.001 0.01 0.1 1 Collector current IC (A) 3 2006-11-13 2SC6061 rth - tw 1000 Transient thermal resistance rth (C/W) 100 10 1 0.001 Curves apply only to limited areas of thermal resistance. Single non-repetitive pulse Ta = 25C Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2) 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 10 IC max ()* IC max (pulsed)* 10 ms 1 10 s 100 ms IC max IC max () (continuous) DC* operation Ta = 25 C Single non-repetitive pulse Ta = 25C Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren't mounted on an 0.01 FR4 board (glass-epoxy, 1.6 mm thick, Cu area: 645 mm2). Single-device operation 100 ms* These characteristic curves must be de-rated linearly with increase in temperature. 0.001 10 0.1 1 s Collector current IC (A) 1 ms 0.1 10 s* VCEO max 100 1000 Collector -emitter voltage VCE (V) 4 2006-11-13 2SC6061 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-13 |
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